New York: Goyoung Lee, Executive Vice President of Products and DRAM Technologies, at Samsung, South Korea, revealed the development of 16GB DDR5 DRAM.
This memory is the first in the industry based on the 12-nanometer process technology, in addition to completing AMD’s approval of it.
“The new 12nm DRAM will be a key enabler in driving the adoption of DDR5 DRAM in the market,” said Goyoung Lee, in a statement.
Lee added that with exceptional performance and energy efficiency, Samsung expects its new DRAM memory to be the foundation for more sustainable operations in areas such as: next-generation computing, data centers, and AI-based systems.
For its part, AMD said: “We are pleased to collaborate again with Samsung, especially in providing DDR5 memory that is optimized and validated for Zen platforms.”
Samsung explained that this technical leap was achieved through the use of a new high-quality material that increases the capacity of the cell, and its design technology that improves the characteristics of the critical circuit.
Combined with advanced multi-layer UV lithography, the new DRAM features the highest chip density in the industry, enabling chip throughput to be increased by 20 percent.
Leveraging the latest DDR5 standard, Samsung believes the new 12nm DRAM will help reach speeds of up to 7.2Gbps, allowing for the processing of two 30GB UHD movies in just one second.
The exceptional speed of the new DRAM is matched by great energy efficiency, as it consumes up to 23 percent less power than the previous generation of DRAM, and the 12nm DRAM will be, according to Samsung, an ideal solution for global IT companies seeking to More environmentally friendly operations.
With the start of mass production in 2023, Samsung plans to expand its DRAM lineup based on the advanced 12nm process technology; to include a broad range of market segments, as it continues to work with industry partners to support the rapid expansion of the next generation of computing.
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